EN27LN4G08

EN27LN4G08 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory EN27LN4G08 Features Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max.) - Serial Access : 25ns (Min.) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Page Program Time : 250µs (Typ.) - Block Erase Time : 2ms (Typ.) Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions Reliable CMOS Floating-Gate Technology - ECC Requirement: 4 bit/512 Byte - Endurance: 100K Program/Erase Cycles - Data Retention: 10 Years Command Register Operation Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download NOP: 4 cycles Cache Program Operation for High Performance Program Cache Read Operation Copy-Back Operation - EDO mode - OTP Operation - Two-Plane Operation This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 1 ©2013 Eon Silicon Solution, Inc., www.eonssi.com Rev. A, Issue Date: 2013/10/03 General Description EN27LN4G08 The device is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state ma...