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EN27LN2G08
3.3V NAND Flash Memory
Description
EN27LN2G08_Preliminary EN27LN2G08 2 Gigabit (256M x 8), 3.3 V NAND Flash Memory Features Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array : (256M + 16M) x 8bit - Data Register : (2K + 64) x 8bit Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes Page Read Operation - Page Size : (2K + 64) bytes...
EON
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EN27LN2G08
3.3V NAND Flash Memory
- EON
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