2SC2655
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2655
Power Amplifier Applications Power Switchi...
2SC2655
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
2SC2655
Power Amplifier Applications Power Switching Applications
Industrial Applications Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA1020.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Base current
IB
0.5
A
JEDEC
TO-92MOD
Collector power dissipation Junction temperature Storage temperature range
PC
900
mW
Tj
150
°C
Tstg
−55 to 150
°C
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21
2SC2655
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current E...
