20V Dual N-Channel MOSFET
AON7820
20V Dual N-Channel MOSFET
General Description
Product Summary
The AON7820 combines advanced trench MOSFET tec...
Description
AON7820
20V Dual N-Channel MOSFET
General Description
Product Summary
The AON7820 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RSS(ON). This device is ideal for load switch and battery protection applications.
VDS IS (at VGS=4.5V) RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS =3.5V) RSS(ON) (at VGS =2.5V)
Typical ESD protection
20V 35A < 16mΩ < 17mΩ < 20mΩ
HBM Class 2
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
S1 G1 S2 G2
D1 D1 D2 G
D2
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
IS ISM
Continuous Drain Current
TA=25°C TA=70°C
ISSM
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 20 ±12 35 22 80 11 9 31 12.5 3.1 2
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 30 60 3.2
Max 40 75 4
D
S
Units V V A
A W W °C
Units °C/W °C/W °C/W
Rev 0: August 2011
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AON7820
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=20V, VGS=0V
...
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