FSS275

Ordering number : ENA0732 FSS275 SANYO Semiconductors DATA SHEET FSS275 Features Low ON-resistance. 4V drive. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10µs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD Tch Tstg Conditions Duty cycle≤1% Duty cycle≤1% Mounted on a ceramic board (2000mm2✕0.8mm), PW≤10s Ratings 60 ±20 6 6.5 24 1.9 150 --55 to +150 Unit V V A A A W °C °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : S275 V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3A ID=3A, VGS=10V ID=3A, VGS=4V min 60 1.2 3.4 Ratings typ max Unit V 1 µA ±10 µA 2.6 V 5.8 S 33 43 mΩ 44 62 mΩ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not ...