CEP703ALS2

CEP703ALS2/CEB703ALS2 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS(ON)=17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @TJ=125 C -Pulsed ID IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation @Tc=25 C Derate above 25 C PD 15 Operating and StorageTemperature Range TJ, TSTG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA Limit 30 Ć20 40 120 40 50 0.4 -65 to 175 3 62.5 Unit V V A A A W W/ C C C /W C /W 15-12 CEP703ALS2/CEB703ALS2 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter ...