Document
Green DMT69M8LPS
60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI
Product Summary
BVDSS 60V
RDS(ON) Max
12mΩ @ VGS = 10V 14mΩ @ VGS = 4.5V
ID TC = +25°C
70A 55A
Features
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low RDS(ON) – Minimizes Power Losses Low QG – Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
High Frequency Switching Sync. Rectification DC-DC Converters
Mechanical Data
Case: PowerDI®5060-8 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate)
PowerDI5060-8
Pin1
SD SD SD GD
Top View
Bottom View
Internal Schematic
Top View Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number DMT69M8LPS-13
Case PowerDI5060-8
Packaging 2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
DDDD
T69M8LS YY WW
T6009LS YY WW
= Manufacturer’s Marking T69M8LS & T6009LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 - 53)
SS SG
SS SG
PowerDI is a registered trademark of Diodes Incorporated.
DMT69M8LPS
Document number: DS38379 Rev. 2 - 2
1 of 7 www.diodes.com
May 2016
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH
TA = +25°C TA = +70°C TC = +25°C TC = +70°C
Symbol VDSS VGSS
ID
ID
IS IDM IAS EAS
DMT69M8LPS
Value 60 ±16
10.2 8.2
70 55 100 160 20.3 20.6
Units V V
A
A
A A A mJ
Thermal Characteristics
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range
TA = +25°C TC = +25°C
Symbol PD RθJA PD RθJC
TJ, TSTG
Value 2.3 53 113 1.1
-55 to +150
Units W
°C/W W
°C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Symbol Min Typ Max
BVDSS IDSS IGSS
60 — —
—— —1 — ±100
VGS(TH)
0.7
—
2
— 9.8 12
RDS(ON)
—
12
14
VSD — 0.9 —
CISS COSS CRSS
RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR
QRR
— 1,925 — — 438 — — 41 — — 1.7 — — 33.5 — — 15.6 — — 4.7 — — 5.3 — — 4.5 — — 8.6 — — 35.9 — — 15.7 — — 18.2 —
— 33.1 —
Unit
Test Condition
V VGS = 0V, ID = 1mA μA VDS = 48V, VGS = 0V nA VGS = ±16V, VDS = 0V
V VDS = VGS, ID = 250μA mΩ VGS = 10V, ID = 13.5A
VGS = 4.5V, ID = 11.5A V VGS = 0V, IS = 20A
pF
VDS = 30V, VGS = 0V, f = 1MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 30V, ID = 13.5A
ns
VDD = 30V, VGS = 10V, RG = 6Ω, ID = 13.5A
ns nC IF = 13.5A, di/dt = 400A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
DMT69M8LPS
Document number: DS38379 Rev. 2 - 2
2 of 7 www.diodes.com
May 2016
© Diodes Incorporated
DMT69M8LPS
ID, DRAIN CURRENT (A)
50.0 45.0 40.0 35.0 30.0 25.0 20.0 15.0 10.0
5.0 0.0
0
10.00
VGS = 10.0V VGS = 4.5V
V.