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DMT69M8LPS Dataheets PDF



Part Number DMT69M8LPS
Manufacturers Diodes
Logo Diodes
Description N-CHANNEL MOSFET
Datasheet DMT69M8LPS DatasheetDMT69M8LPS Datasheet (PDF)

Green DMT69M8LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary BVDSS 60V RDS(ON) Max 12mΩ @ VGS = 10V 14mΩ @ VGS = 4.5V ID TC = +25°C 70A 55A Features  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes Power Losses  Low QG – Minimizes Switching Losses  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Descr.

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Green DMT69M8LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary BVDSS 60V RDS(ON) Max 12mΩ @ VGS = 10V 14mΩ @ VGS = 4.5V ID TC = +25°C 70A 55A Features  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes Power Losses  Low QG – Minimizes Switching Losses  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.  High Frequency Switching  Sync. Rectification  DC-DC Converters Mechanical Data  Case: PowerDI®5060-8  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.097 grams (Approximate) PowerDI5060-8 Pin1 SD SD SD GD Top View Bottom View Internal Schematic Top View Pin Configuration Ordering Information (Note 4) Notes: Part Number DMT69M8LPS-13 Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information DDDD DDDD T69M8LS YY WW T6009LS YY WW = Manufacturer’s Marking T69M8LS & T6009LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 - 53) SS SG SS SG PowerDI is a registered trademark of Diodes Incorporated. DMT69M8LPS Document number: DS38379 Rev. 2 - 2 1 of 7 www.diodes.com May 2016 © Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 5) Continuous Drain Current (Note 6) Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH TA = +25°C TA = +70°C TC = +25°C TC = +70°C Symbol VDSS VGSS ID ID IS IDM IAS EAS DMT69M8LPS Value 60 ±16 10.2 8.2 70 55 100 160 20.3 20.6 Units V V A A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = +25°C TC = +25°C Symbol PD RθJA PD RθJC TJ, TSTG Value 2.3 53 113 1.1 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol Min Typ Max BVDSS IDSS IGSS 60 — — —— —1 — ±100 VGS(TH) 0.7 — 2 — 9.8 12 RDS(ON) — 12 14 VSD — 0.9 — CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR — 1,925 — — 438 — — 41 — — 1.7 — — 33.5 — — 15.6 — — 4.7 — — 5.3 — — 4.5 — — 8.6 — — 35.9 — — 15.7 — — 18.2 — — 33.1 — Unit Test Condition V VGS = 0V, ID = 1mA μA VDS = 48V, VGS = 0V nA VGS = ±16V, VDS = 0V V VDS = VGS, ID = 250μA mΩ VGS = 10V, ID = 13.5A VGS = 4.5V, ID = 11.5A V VGS = 0V, IS = 20A pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 13.5A ns VDD = 30V, VGS = 10V, RG = 6Ω, ID = 13.5A ns nC IF = 13.5A, di/dt = 400A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT69M8LPS Document number: DS38379 Rev. 2 - 2 2 of 7 www.diodes.com May 2016 © Diodes Incorporated DMT69M8LPS ID, DRAIN CURRENT (A) 50.0 45.0 40.0 35.0 30.0 25.0 20.0 15.0 10.0 5.0 0.0 0 10.00 VGS = 10.0V VGS = 4.5V V.


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