CEP7030L

CEP7030L/CEB7030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 65A,RDS(ON) = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 65 180 60 0.4 Operating and Store Temperature Range TJ,Tstg -65 to 175 Units V V A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.5 62.5 Units C/W C/W 2002.December 4 - 130 http://www.cetsemi.com CEP7030L/CEB7030L Electrical Characteristics Tc = 25 C unle...