N-Channel Enhancement Mode Field Effect Transistor
Description
CEP6060R/CEB6060R
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATI...
