SC8650

Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SC8650 Preliminary PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Typ 2.5 @ VGS=4.5V 2.6 @ VGS=4.0V 12V 18A 2.8 @ VGS=3.8V 3.3 @ VGS=3.1V 4.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.77 0.04 BOTTOM VIEW 0.485 0.80 LAND PATTERN (REFERENCE) 0.80 43 3.05 0.04 8650 Date Code 1.005 1.005 0.8775 0.8775 0.6475 0.8775 0.8775 0.6475 52 φ 0.25 61 Mark area 1-pin index mark S1 0.35 0.16 0.01 ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 12 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±8 18 100 PT Total Power Dissipation a 2.5 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A W °C Details are subject to change without notice. 1 φ 0.25 0.35 PIN 2 Unit : mm PIN 5 Rg Rg Rg=200 PIN 1,3 PIN 4,6 PIN 1 : Source 1 PIN 2 : Gate 1 PIN 3 : Source 1 PIN 4 : Source 2 PIN 5: Gate 2 PIN 6 : Source 2 Jul,07,2015 www.samhop.com.tw SC8650 Preliminary ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVSSS Source-Source Breakdown Voltage ISSS Zero Gate Voltage Source Current IGSS Gate-Body Leakage Current VGS=0V , IS=1mA VSS=10V , VGS=0V VGS= ±5V , VSS=0V 12 V 1 uA ±1 uA ON CHARACTERISTICS VGS(...