SC8612

Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SC8612 Preliminary PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Typ 4.2 @ VGS=4.5V 4.3 @ VGS=4.0V 20V 27A 4.4 @ VGS=3.8V 4.9 @ VGS=3.1V 5.6 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW BOTTOM VIEW 1.77 4x 0.25 0.03 3.54 8612 Date Code 1.25 0.03 43 52 61 Mark area 1-pin index mark S1 3 2x φ 0.25 0.03 2 1 0.16 0.01 4 5 6 0.25 0.5 ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 20 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±8 27 100 PT Total Power Dissipation a 2.5 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A W °C Details are subject to change without notice. 1 1.00 1.00 LAND PATTERN (REFERENCE) PACKAGE OUTLINE 0.50 PITCH 4X 1.25 2.00 PITCH 2X 0.25 8X R0.125 PIN 2 Unit : mm PIN 5 Rg Rg Rg=200 PIN 1,3 PIN 4,6 PIN 1 : Source 1 PIN 2 : Gate 1 PIN 3 : Source 1 PIN 4 : Source 2 PIN 5: Gate 2 PIN 6 : Source 2 Jul,07,2015 www.samhop.com.tw SC8612 Preliminary ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVSSS Source-Source Breakdown Voltage ISSS Zero Gate Voltage Source Current IGSS Gate-Body Leakage Current VGS=0V , IS=1mA VSS=10V , VGS=0V VGS= ±8V , VSS=0V 20 V 1 uA...