CEM9953A
Dual P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -3.5A, RDS(ON) = 80mΩ @VGS = -10V. RDS(...
CEM9953A
Dual P-Channel Enhancement Mode Field Effect
Transistor
FEATURES
-30V, -3.5A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 130mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 D1 D2 D2 876 5
5
SO-8
1
123 4 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS -30
VGS ±20
ID -3.5 IDM -14
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 62.5
Units V V A A W C
Units C/W
2002.July
5 - 267
http://www.cetsemi.com
CEM9953A
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdo...