CEM9435A
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -5.3A, RDS(ON) = 50mΩ @VGS = -10V. RDS(ON) =...
CEM9435A
P-Channel Enhancement Mode Field Effect
Transistor
FEATURES
-30V, -5.3A, RDS(ON) = 50mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -5.3 IDM -20
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 50
Units V V A A W C
Units C/W
Details are subject to change without notice .
1
Rev 3. 2010.Apr. http://www.cetsemi.com
CEM9435A
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characte...
