IXYY8N90C3

900V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYY8N90C3 IXYP8N90C3 VCES = 900V IC110 = 8A VCE(sat)  3.0V tfi(typ) = 130ns Symbol VCES VCGR VGES VGEM IICC12150 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TTCC = 25°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 30 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-220 Maximum Ratings 900 V 900 V ±20 V ±30 V 20 A 8A 48 A 4A 15 mJ ICM = 16 @VCE VCES 125 A W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 0.35 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 8A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 950 V 3.5 6.0 V 10 A 150 μA 100 nA 2.15 3.00 V 2.75 V TO-252 (IXYY) G E TO-220 (IXYP) C (Tab) GC E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector Features  Optimized for Low Switching Losses  Square RBSOA  Positive Thermal Coefficient of Vce(sat)  Avalanche Rated  International Standard Packages Advantages  High Power Density  Low Gate Drive Requirement Applications  High Frequency Power Inverters  UPS  Motor Dri...