IXYN100N120B3H1

Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120B3H1 Extreme Light Punch Through IGBT for 5-30 kHz Switching E VCES IC110 VCE(sat) tfi(typ) = = ≤ = 1200V 76A 2.6V 240ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 1200 1200 V V ±20 V ±30 V 165 A 76 A 42 A 480 A 50 A 1.2 J ICM = 200 ≤@VCE VCES 690 A W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 Nm/lb.in. 1.3/11.5 Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 50 μA 2.75 mA ±100 nA 2.20 2.60 V 2.76 V SOT-227B, miniBLOC E153432 Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter Features z Optimized for 5-30kHZ Switching z Square RBSOA z 2500V~ Isolation Voltage z Anti-Parallel Ultra Fast Diode z Positive Thermal Coefficient of Vce(sat) z Avala...