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IXYK120N120B3

IXYS

IGBT

1200V XPTTM IGBT GenX3TM High-Speed IGBT for 10-30 kHz Switching Advance Technical Information IXYK120N120B3 IXYX120N1...


IXYS

IXYK120N120B3

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1200V XPTTM IGBT GenX3TM High-Speed IGBT for 10-30 kHz Switching Advance Technical Information IXYK120N120B3 IXYX120N120B3 VCES = 1200V IC110 = 120A VCE(sat)  2.2V tfi(typ) = 260ns TO-264P (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load TC = 25°C 320 160 120 800 60 2 ICM = 240 VCE VCES 1500 -55 ... +175 175 -55 ... +175 A A A A A J A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.in N/lb TO-264P PLUS247 10 g 6g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 25 A 1.5 mA 200 nA 1.8 2.2 V 2.4 V G C E PLUS247 (IXYX) Tab G G C E G = Gate C = Collector Tab E = Emitter Tab = Collector Features  Square RBSOA  International Standard Packages  Positive Thermal Coefficient of Vce(sat)  Avalanche Rated  High Current ...




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