IXYH30N65B3D1

Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode Extreme Light Punch Through IGBT for 5-30kHz Switching IXYH30N65B3D1 IXYQ30N65B3D1 VCES = 650V IC110 = 30A VCE(sat)  2.1V tfi(typ) = 33ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-247 TO-3P Maximum Ratings 650 V 650 V ±20 V ±30 V 70 A 30 A 50 A 160 A 10 A 300 mJ ICM = 60 @VCE VCES 5 A μs 270 -55 ... +175 175 -55 ... +175 300 260 1.13/10 6.0 5.5 W °C °C °C °C °C Nm/lb.in g g TO-247 (IXYH) G CE TO-3P (IXYQ) Tab G C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features  Optimized for Low 5-30kHz Switching  Square RBSOA  Anti-Parallel Fast Diode  Avalanche Rated  Short Circuit Capability Advantages  High Power Density  Extremely Rugged  Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteristic Values...