Document
900V XPTTM IGBT GenX3TM w/ Diode
High-Speed IGBT for 20-50 kHz Switching
IXYA8N90C3D1 IXYP8N90C3D1
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110 ICM
IA EAS
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
Continuous Transient
900 V 900 V
±20 V ±30 V
TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms
TC = 25°C TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 30 Clamped Inductive Load
TC = 25°C
20 8
12 48
4 15
ICM = 16
@VCE VCES
125
-55 ... +175 175
-55 ... +175
A A A A
A mJ
A
W
°C °C °C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
300 °C 260 °C
Mounting Torque (TO-220) Mounting Force (TO-263)
1.13/10 10..65 / 2.2..14.6
Nm/lb.in. N/lb.
TO-263 TO-220
2.5 g 3.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 8A, VGE = 15V, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max.
950 V
3.5 6.0 V
60 A 400 μA
100 nA
2.15 2.60
3.00 V V
VCES = 900V IC110 = 8A VCE(sat) 3.0V tfi(typ) = 130ns
TO-263 AA (IXYA)
G E C (Tab)
TO-220AB (IXYP)
GC E
C (Tab)
G = Gate E = Emitter
C = Collector Tab = Collector
Features
Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of
Vce(sat) Anti-Parallel Ultra Fast Diode Avalanche Rated International Standard Packages
Advantages
High Power Density Low Gate Drive Requirement
Applications
High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100400C(12/14)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 8A, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on) Qge Qgc
IC = 8A, VGE = 15V, VCE = 0.5 • VCES
td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 25°C IC = 8A, VGE = 15V VCE = 0.5 • VCES, RG = 30
Note 2
td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 125°C IC = 8A, VGE = 15V VCE = 0.5 • VCES, RG = 30
Note 2
RthJC RthCS
TO-220
Characteristic Values
Min.
Typ. Max.
2.9 4.8
S
400 pF 30 pF 7.8 pF
13.3 nC 3.4 nC 5.8 nC
16 20 0.46 40 130 0.18
ns ns mJ ns ns 0.50 mJ
17 ns 22 ns 1.00 mJ 75 ns 163 ns 0.22 mJ
1.2 °C/W 0.50 °C/W
Reverse Diode (FRED)
(TJ = 25°C, Unless Otherwise Specified)
Symbol
Test Conditions
Characteristic Value Min. Typ. Max.
VF IF = 10A,VGE = 0V, Note 1
TJ = 150°C
3.0 V 2.0 V
IRM
IF = 10A,VGE = 0V, -diF/dt = 200A/μs, TJ = 100°C
7.5
A
trr VR = 600V
TJ = 100°C
114
ns
RthJC
2.5 °C/W
IXYA8N90C3D1 IXYP8N90C3D1
TO-263 Outline
1. Gate 2. Collector 3. Emitter 4. Collector
Bottom Side
Dim.
A b b2
c c2
D D1
E
E1 e L L1 L2 L3 L4
Millimeter Min. Max.
4.06 0.51 1.14
4.83 0.99 1.40
0.40 1.14
0.74 1.40
8.64 8.00
9.65 8.89
9.65 10.41
6.22 2.54 14.61 2.29 1.02 1.27
.