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IXYA8N90C3D1 Dataheets PDF



Part Number IXYA8N90C3D1
Manufacturers IXYS
Logo IXYS
Description IGBT
Datasheet IXYA8N90C3D1 DatasheetIXYA8N90C3D1 Datasheet (PDF)

900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 900 V 900 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 30 Clamped Inductive Load TC = 25°C 20 8 12 48 4 15 ICM = 16 @VC.

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900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 900 V 900 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 30 Clamped Inductive Load TC = 25°C 20 8 12 48 4 15 ICM = 16 @VCE VCES 125 -55 ... +175 175 -55 ... +175 A A A A A mJ A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-220) Mounting Force (TO-263) 1.13/10 10..65 / 2.2..14.6 Nm/lb.in. N/lb. TO-263 TO-220 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 8A, VGE = 15V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 950 V 3.5 6.0 V 60 A 400 μA 100 nA 2.15 2.60 3.00 V V VCES = 900V IC110 = 8A VCE(sat)  3.0V tfi(typ) = 130ns TO-263 AA (IXYA) G E C (Tab) TO-220AB (IXYP) GC E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector Features  Optimized for Low Switching Losses  Square RBSOA  Positive Thermal Coefficient of Vce(sat)  Anti-Parallel Ultra Fast Diode  Avalanche Rated  International Standard Packages Advantages  High Power Density  Low Gate Drive Requirement Applications  High Frequency Power Inverters  UPS  Motor Drives  SMPS  PFC Circuits  Battery Chargers  Welding Machines  Lamp Ballasts © 2014 IXYS CORPORATION, All Rights Reserved DS100400C(12/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 8A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 8A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 8A, VGE = 15V VCE = 0.5 • VCES, RG = 30 Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 125°C IC = 8A, VGE = 15V VCE = 0.5 • VCES, RG = 30 Note 2 RthJC RthCS TO-220 Characteristic Values Min. Typ. Max. 2.9 4.8 S 400 pF 30 pF 7.8 pF 13.3 nC 3.4 nC 5.8 nC 16 20 0.46 40 130 0.18 ns ns mJ ns ns 0.50 mJ 17 ns 22 ns 1.00 mJ 75 ns 163 ns 0.22 mJ 1.2 °C/W 0.50 °C/W Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Value Min. Typ. Max. VF IF = 10A,VGE = 0V, Note 1 TJ = 150°C 3.0 V 2.0 V IRM IF = 10A,VGE = 0V, -diF/dt = 200A/μs, TJ = 100°C 7.5 A trr VR = 600V TJ = 100°C 114 ns RthJC 2.5 °C/W IXYA8N90C3D1 IXYP8N90C3D1 TO-263 Outline 1. Gate 2. Collector 3. Emitter 4. Collector Bottom Side Dim. A b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 Millimeter Min. Max. 4.06 0.51 1.14 4.83 0.99 1.40 0.40 1.14 0.74 1.40 8.64 8.00 9.65 8.89 9.65 10.41 6.22 2.54 14.61 2.29 1.02 1.27 .


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