Document
Advance Technical Information
XPTTM 650V IGBT GenX3TM
Extreme Light Punch Through IGBT for 5-30kHz Switching
IXYA20N65B3 IXYP20N65B3 IXYH20N65B3
VCES = 650V IC110 = 20A VCE(sat) 2.10V tfi(typ) = 87ns
TO-263 (IXYA)
Symbol
VCES VCGR
VGES VGEM
IICC12150 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
FC Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
Continuous Transient
650 V 650 V
±20 V ±30 V
TTCC
= 25°C = 110°C
TC = 25°C, 1ms
TC = 25°C TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive
TC = 25°C
58 20 108
10 200
ICM = 40
@VCE VCES
5
230
-55 ... +175 175
-55 ... +175
A A A A mJ A
μs
W °C °C °C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
300 °C 260 °C
Mounting Force (TO-263) Mounting Torque (TO-247 & TO-220)
10..65 / 2.2..14.6 1.13 / 10
N/lb Nm/lb.in
TO-263 TO-220 TO-247
2.5 g 3.0 g 6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1 TJ
=
150C
Characteristic Values Min. Typ. Max.
650 V
3.5 6.0 V
10 A 150 A
100 nA
1.77 2.05
2.10 V V
G E
TO-220 (IXYP)
C (Tab)
GC E
C (Tab)
TO-247 AD (IXYH)
G CE
G = Gate E = Emitter
C (Tab)
C = Collector Tab = Collector
Features
Optimized for 5-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability International Standard Packages
Advantages
High Power Density Extremely Rugged Low Gate Drive Requirement
Applications
Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100644(02/15)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 20A, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on) Qge Qgc
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 25°C IC = 20A, VGE = 15V VCE = 400V, RG = 20
Note 2
td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 150°C IC = 20A, VGE = 15V VCE = 400V, RG = 20
Note 2
RthJC RthCS RthCS
TO-220 TO-247
IXYA20N65B3 IXYP20N65B3 IXYH20N65B3
Characteristic Values
Min.
Typ. Max.
TO-220 Outline
8.5 14
S
826 pF 66 pF 19 pF
29 nC 6 nC
14 nC
12 25 0.50 103 87 0.45
0.70
ns ns mJ ns ns mJ
Pins: 1 - Gate 3 - Emitter
2 - Collector
13 ns 26 ns 0.93 mJ 124 ns 147 ns 0.76 mJ
0.65 °C/W 0.50 °C/W
0.21 °C/W
TO-247 Outline
Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
TO-263 Outline
1 = Gate 2 = Collector 3 = Emitter 4 = Collector
1 - Gate 2,4 - Collector 3 - Emitter
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IC - Amperes
IC - Amperes
40 35 30 25 20 15 10
5 0
0
40 35 30 25 20 15 10
5 0
0
6
5
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V
13V 12V 11V
10V
9V
8V
7V
0.5 1 1.5 2 2.5 3 3.5
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
13V 12V 11V
10V
9V
8V
7V 6V
0.5 1 1.5 2 2.5 3 3.5 4
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
TJ = 25ºC
4 I C = 40A
3
20A 2
10A 1
7 8 9 10 11 12 13 14 15
VGE - Volts
IC - Amperes
VCE(sat) - Normalized
IC - Amperes
IXYA20N65B3 IXYP20N65B3 IXYH20N65B3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
120 100
80 60 40 20
0 0
2.0 1.8 1.6
VGE = 15V
14V 13V 12V 11V 10V 9V 8V 7V
5 10 15 20 25 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V
I C = 40A
1.4
1.2 I C = 20A
1.0
0.8 I C = 10A
0.6 -50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
45
40
35
30
25
20
15
TJ = 150ºC 25ºC
10 - 40ºC
5
0 4 5 6 7 8 9 10
VGE - Volts
VCE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
g f s - Siemens
Fig. 7. Transconductance
24
VCE = 10V 20
TJ = - 40ºC
25ºC 16
150ºC 12
8
4
0 0 5 10 15 20 25 30 35 40 45 50 55
IC - Amperes
10,000
f = 1 MHz
Fig. 9. Capacitance.