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IXYA20N65B3 Dataheets PDF



Part Number IXYA20N65B3
Manufacturers IXYS
Logo IXYS
Description IGBT
Datasheet IXYA20N65B3 DatasheetIXYA20N65B3 Datasheet (PDF)

Advance Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 5-30kHz Switching IXYA20N65B3 IXYP20N65B3 IXYH20N65B3 VCES = 650V IC110 = 20A VCE(sat)  2.10V tfi(typ) = 87ns TO-263 (IXYA) Symbol VCES VCGR VGES VGEM IICC12150 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TTCC = 25°C = 110°C TC = 25°C, 1ms.

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Advance Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 5-30kHz Switching IXYA20N65B3 IXYP20N65B3 IXYH20N65B3 VCES = 650V IC110 = 20A VCE(sat)  2.10V tfi(typ) = 87ns TO-263 (IXYA) Symbol VCES VCGR VGES VGEM IICC12150 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TTCC = 25°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C 58 20 108 10 200 ICM = 40 @VCE VCES 5 230 -55 ... +175 175 -55 ... +175 A A A A mJ A μs W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force (TO-263) Mounting Torque (TO-247 & TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 650 V 3.5 6.0 V 10 A 150 A 100 nA 1.77 2.05 2.10 V V G E TO-220 (IXYP) C (Tab) GC E C (Tab) TO-247 AD (IXYH) G CE G = Gate E = Emitter C (Tab) C = Collector Tab = Collector Features  Optimized for 5-30kHz Switching  Square RBSOA  Avalanche Rated  Short Circuit Capability  International Standard Packages Advantages  High Power Density  Extremely Rugged  Low Gate Drive Requirement Applications  Power Inverters  UPS  Motor Drives  SMPS  PFC Circuits  Battery Chargers  Welding Machines  Lamp Ballasts © 2015 IXYS CORPORATION, All Rights Reserved DS100644(02/15) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 20A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 20A, VGE = 15V VCE = 400V, RG = 20 Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 150°C IC = 20A, VGE = 15V VCE = 400V, RG = 20 Note 2 RthJC RthCS RthCS TO-220 TO-247 IXYA20N65B3 IXYP20N65B3 IXYH20N65B3 Characteristic Values Min. Typ. Max. TO-220 Outline 8.5 14 S 826 pF 66 pF 19 pF 29 nC 6 nC 14 nC 12 25 0.50 103 87 0.45 0.70 ns ns mJ ns ns mJ Pins: 1 - Gate 3 - Emitter 2 - Collector 13 ns 26 ns 0.93 mJ 124 ns 147 ns 0.76 mJ 0.65 °C/W 0.50 °C/W 0.21 °C/W TO-247 Outline Notes: 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. TO-263 Outline 1 = Gate 2 = Collector 3 = Emitter 4 = Collector 1 - Gate 2,4 - Collector 3 - Emitter ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IC - Amperes IC - Amperes 40 35 30 25 20 15 10 5 0 0 40 35 30 25 20 15 10 5 0 0 6 5 Fig. 1. Output Characteristics @ TJ = 25ºC VGE = 15V 13V 12V 11V 10V 9V 8V 7V 0.5 1 1.5 2 2.5 3 3.5 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC VGE = 15V 13V 12V 11V 10V 9V 8V 7V 6V 0.5 1 1.5 2 2.5 3 3.5 4 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage TJ = 25ºC 4 I C = 40A 3 20A 2 10A 1 7 8 9 10 11 12 13 14 15 VGE - Volts IC - Amperes VCE(sat) - Normalized IC - Amperes IXYA20N65B3 IXYP20N65B3 IXYH20N65B3 Fig. 2. Extended Output Characteristics @ TJ = 25ºC 120 100 80 60 40 20 0 0 2.0 1.8 1.6 VGE = 15V 14V 13V 12V 11V 10V 9V 8V 7V 5 10 15 20 25 30 VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature VGE = 15V I C = 40A 1.4 1.2 I C = 20A 1.0 0.8 I C = 10A 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Input Admittance 45 40 35 30 25 20 15 TJ = 150ºC 25ºC 10 - 40ºC 5 0 4 5 6 7 8 9 10 VGE - Volts VCE - Volts © 2015 IXYS CORPORATION, All Rights Reserved g f s - Siemens Fig. 7. Transconductance 24 VCE = 10V 20 TJ = - 40ºC 25ºC 16 150ºC 12 8 4 0 0 5 10 15 20 25 30 35 40 45 50 55 IC - Amperes 10,000 f = 1 MHz Fig. 9. Capacitance.


IXYH20N65C3 IXYA20N65B3 IXYP20N65B3


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