Power MOSFET
X2-Class Power MOSFET
Advance Technical Information
IXTT34N65X2HV
VDSS = ID25 = RDS(on)
650V 34A 96m
N-Channel En...
Description
X2-Class Power MOSFET
Advance Technical Information
IXTT34N65X2HV
VDSS = ID25 = RDS(on)
650V 34A 96m
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
Maximum Ratings 650 650
V V
30 V 40 V
34 A 68 A
17 A 1J
50 V/ns
540 W
-55 ... +150 150
-55 ... +150
300 260
C C C
°C °C
4g
TO-268HV (IXTT)
G S D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
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Characteristic Values
Min. Typ.
Max.
650 V
3.0 5.0 V
100 nA
10 A 150 A
96 m
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls
DS100701(01/16)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)...
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