IXTR40P50P

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR40P50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 HZ ,RMS, t= 1min Mounting Force Maximum Ratings - 500 - 500 ±20 ±30 - 22 -120 - 40 3.5 V V V V A A A J 10 312 -55 ... +150 150 -55 ... +150 300 260 2500 20..120/4.5..27 5 V/ns W °C °C °C °C °C V~ N/lb. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = -1mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = - 20A, Note 1 Characteristic Values Min. Typ. Max. - 500 V - 2.0 - 4.0 V ±100 nA - 50 μA - 250 μA 260 mΩ VDSS = ID25 = ≤RDS(on) - 500V - 22A 260mΩ ISOPLUS247 E153432 G DS Isolated Tab G = Gate D = Drain S = Source Features z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Dynamic dv/dt Rating z Avalanche Rated z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switches z Push Pull Am...