Power MOSFET
PolarPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTK170P10P IXTX170P10P
VDSS = ID25 = ≤RDS(on)
-100...
Description
PolarPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTK170P10P IXTX170P10P
VDSS = ID25 = ≤RDS(on)
-100V -170A 12mΩ
TO-264 (IXTK)
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force (PLUS247) Mounting Forque (TO-264) PLUS247 TO-264
Maximum Ratings -100 -100
V V
±20 ±30
-170 -160 - 510
V V
A A A
-170
A
3.5 J
10 V/ns
890 W
-55 ... +150 150
-55 ... +150
300 260
20..120 / 4.5..27 1.13 / 10
6 10
°C °C °C
°C °C
N/lb. Nm/lb.in.
g g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = -1mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
-100
V
- 2.0
- 4.0 V
±100 nA
- 50 μA - 250 μA
12 mΩ
G D S
PLUS247 (IXTX)
Tab
G DS
Tab
G = Gate S = Source
D = Drain Tab = Drain
Features
z International Standard Packages z Rugged PolarPTM Process z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low Package Inductance
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z High-Side Switches z Pus...
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