Dual Enhancement Mode Field Effect Transistor(N and P Channel)
Description
CEM4539
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
30V, 5.8A, RDS(ON) = 37mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V.
-30V, -4.9A, RDS(ON) = 53mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mou...
