CEM4412S1

CEM4412S1 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V , 7A , RDS(ON)=28m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. Surface mount package. D DDD 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @TJ=125 C -Pulsed ID IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and Storage 15 Temperature Range TJ, TSTG Limit 30 Ć20 Ć7 Ć30 2.3 2.5 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient RįJA 50 C /W 15-22 CEM4412S1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICSb G...