Transistors
Power Transistor (120V, 6A)
2SD2615
2SD2615
!Features 1) Darlington connection for high DC current gain. 2...
Transistors
Power
Transistor (120V, 6A)
2SD2615
2SD2615
!Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674.
!Circuit diagram
C
B
R1 R2 E
R1 5.0kΩ B : Base R2 300Ω C : Collector
E : Emitter
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature Storage temperature * Single pulse, Pw=100ms
Symbol VCBO VCEO VEBO
IC
PC
Tj Tstg
Limits
120 120
6 6 10 2 30 150 −55 ∼ +150
Unit
V V V A(DC) A(Pulse) * W W(Tc=25°C) °C °C
!Packaging specifications and hFE
Type Package
hFE Code Basic ordering unit (pieces)
2SD2615
TO-220FN 2K∼20K − 500
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min. Typ.
Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
BVCBO BVCEO
ICBO IEBO VCE(sat) hFE
fT Cob
120 120
− − −
2K − −
− − − − − −
40 50
∗1 Measured using pulse current ∗2 Transition frequency of the device.
Max.
− − 100 3 1.5
20K − −
Unit
V V µA mA V −
MHz pF
Conditions IC = 50µA IC = 5mA VCB = 120V VEB = 5V IC/IB = 3A/6mA VCE/IC= 3V/2A VCE = 5V , IE = −0.2A , f = 10MHz VCB = 10V , IE = 0A , f = 1MHz
∗1 ∗1 ∗2
...
