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CEFB203 Dataheets PDF



Part Number CEFB203
Manufacturers Comchip Technology
Logo Comchip Technology
Description SMD Efficient Fast Recovery Rectifier
Datasheet CEFB203 DatasheetCEFB203 Datasheet (PDF)

SMD Efficient Fast Recovery Rectifier COMCHIP www.comchip.com.tw CEFB201 Thru CEFB205 Reverse Voltage: 50 - 600 Volts Forward Current: 2.0 Amp Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop SMB/DO-214AA 0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06) 0.155(3.94) 0.130(3.30) Mechanical Data 0.096(2.44) 0.083(2..

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SMD Efficient Fast Recovery Rectifier COMCHIP www.comchip.com.tw CEFB201 Thru CEFB205 Reverse Voltage: 50 - 600 Volts Forward Current: 2.0 Amp Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop SMB/DO-214AA 0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06) 0.155(3.94) 0.130(3.30) Mechanical Data 0.096(2.44) 0.083(2.13) 0.012(0.31) 0.006(0.15) Case: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.093 gram 0.050(1.27) 0.030(0.76) 0.220(5.59) 0.200(5.08) 0.008(0.20) 0.203(0.10) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 2.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol V RRM V DC V RMS I FSM CEFB 201 50 50 35 CEFB 202 100 100 70 CEFB 203 200 200 140 CEFB 204 400 400 280 CEFB 205 600 600 420 Unit V V V A 40 35 Io VF Trr IR R 0.875 25 2.0 1.1 35 1.25 50 A V nS uA 5.0 250 15 -55 to +150 -55 to +150 JL C/W C C Tj T STG Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas. MDS0210023A Page 1 SMD Efficient Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CEFB201 Thru CEFB205) Fig. 1 - Reverse Characteristics 100 10 Fig.2 - Forward Characteristics CEFB201-203 Reverse Current ( uA ) 10 Forward current ( A ) Tj=125 C 1.0 CEFB204 CEFB205 0.1 1.0 Tj=75 C 0.1 Tj=25 C 0. 01 0 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0.001 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance 200 100 Junction Capacitance (pF) Fig. 4 - Non Repetitive Forward Surge Current Peak Surge Forward Current ( A ) 50 8.3mS Single Half Sine Wave JEDEC methode 40 30 Tj=25 C 20 Tj=25 C 10 10 0 2 0.1 1.0 10 100 1 5 10 50 1 00 Reverse Voltage (V) Number of Cycles at 60Hz Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 2.8 Average Forward Current ( A ) trr | | | | | | | | 2.4 2.0 1.6 1.2 0.8 0.4 00 (+) 25Vdc (approx.) ( ) 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. ( ) PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0210023A Page 2 .


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