CEDF630/CEUF630
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
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CEU SERIES TO-252(D-PAK)
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CED SERIES TO-251(I-PAK)
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ABSOLUTE MAXIM...
