Power MOSFET
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTY4N65X2 IXTA4N65X2 IXTP4N65X2
V...
Description
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTY4N65X2 IXTA4N65X2 IXTP4N65X2
VDSS = ID25 = RDS(on)
650V 4A 850m
TO-252 (IXTY)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
FMCd Weight
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings 650 650
30 40
V V
V V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
4 8
2 150
50
80
-55 ... +150 150
-55 ... +150
A A
A mJ
V/ns
W
C C C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
300 260
°C °C
Mounting Force (TO-263) Mounting Torque (TO-220)
10.65 / 2.2..14.6 1.13 / 10
N/lb Nm/lb.in
TO-252 TO-263 TO-220
0.35 2.50 3.00
g g g
G S D (Tab)
TO-263 (IXTA)
G S
TO-220 (IXTP)
D (Tab)
GDS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ.
Max.
650 V
3.0 5.0 V
100 nA
5 A 100 A
850 m
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC...
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