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IXTH34N65X2

IXYS

Power MOSFET

X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP34N65X2 IXTH34N65X2 VDSS = ID25 =  RDS(on) 650V...


IXYS

IXTH34N65X2

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X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP34N65X2 IXTH34N65X2 VDSS = ID25 =  RDS(on) 650V 34A 96m TO-220 (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-220 TO-247 Maximum Ratings 650 V 650 V 30 V 40 V 34 A 68 A 17 A 1 J 15 V/ns 540 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 3 g 6 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.0 V 100 nA 10 A 150 μA 96 m G DS TO-247 (IXTH) D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Low R and Q DS(ON) G  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls © 2018 IX...




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