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IXFN90N30

IXYS
Part Number IXFN90N30
Manufacturer IXYS
Description Power MOSFET
Published Aug 16, 2016
Detailed Description Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, H...
Datasheet PDF File IXFN90N30 PDF File

IXFN90N30
IXFN90N30

Overview
Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol V DSS V DGR VGS V GSM ID25 IDM IAR EAR EAS dv/dt PD TJ T JM T stg T J VISOL Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C I S £ I, DM di/dt £ 100 A/ms, V DD £ V, DSS TJ £ 150°C, RG = 2 W TC = 25°C 1.
6 mm (0.
63 in) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s Mounting torque Terminal connection torque IXFN90N30 D G VDSS = 300 V ID25 = 90 A =RDS(on) 33 mW trr £ 250 ns...


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