Document
X-Class HiPerFETTM Power MOSFET
Preliminary Technical Information
IXFQ60N60X IXFH60N60X
VDSS = ID25 = RDS(on)
600V 60A 55m
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-3P TO-247
Maximum Ratings 600 600
V V
30 V 40 V
60 A 120 A
30 A 2.5 J
50 V/ns
890 W
-55 ... +150 150
-55 ... +150
C C C
300 °C 260 °C
1.13 / 10
Nm/lb.in
5.5 g 6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ.
Max.
600 V
2.5 4.5 V
100 nA
25 A 1.25 mA
55 m
TO-3P (IXFQ)
G D S
TO-247 (IXFH)
D (Tab)
GDS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls
© 2015 IXYS CORPORATION, All Rights Reserved
DS100656A(5/15)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 0.5 • ID25, Note 1
RGi Gate Input Resistance
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er) Co(tr)
Effective Output Capacitance
Energy related Time related
VGS = 0V VDS = 0.8 • VDSS
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC RthCS
Characteristic Values Min. Typ. Max
24 40
S
1.4
5800 4130
40
pF pF pF
285 930
27 23 90 13 143 30 70
0.25
pF pF
ns ns ns ns
nC nC nC
0.14 C/W C/W
IXFQ60N60X IXFH60N60X
TO-3P Outline
E ++
A A2 S
D
1 23 L1 A1
0P 0P1
D1
E1 + 4
b2 e
b b4
c
PINS: 1 - Gate 2, 4 - Drain 3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr QRM IRM
IF = 30A, -di/dt = 100A/μs VR = 100V
Characteristic Values Min. Typ. Max
60
A
240 A
1.4 V
200 1.9 18.5
ns μC
A
TO-247 Outline
D A AA22 E
R+ D
1 L1
23
L
A B 0P O+ 0K M D B M
Q S D2
0P1 ixys option
C
+ D1
4
E1
A1 b
c b2
b4 e
PINS: 1 - Gate
O+ J M C A M
2, 4 - Drain
3 - Source
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123B1 6,306,728B1
6,404,065B1 6,534,343 6,583,505
6,683,344
6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537
ID - Amperes
ID - Amperes
Fig. 1. Output Characteristics @ TJ = 25ºC
60 VGS = 10V 8V
50
7V 40
30
6V 20
10
5V 0
0 0.5 1 1.5 2 2.5 3 3.5
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
60 VGS = 10V 8V
50 7V
40
6V 30
20
5V 10
4V 0
01234567
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 30A Value vs.
Drain Current
4.0
VGS = 10V 3.5
TJ = 125ºC
3.0
8
2.5
2.0
TJ = 25ºC 1.5
1.0
0.5 0
20 40 60 80 100 120 140 160 180
ID - Amperes
BVDSS / VGS(th) - Normalized
RDS(on) - Normalized
ID - Amperes
IXFQ60N60X IXFH60N60X
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
160 VGS = 10V 9V
140
120 8V
100
80
60
40
20
0 0
7V
6V 5V 5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature
3.4
3.0 VGS = 10V
2.6 2.2 I D = 60A
1.8 I D = 30A 1.4
1.0
0.6
0.2 -50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature
1.3
1.2 1.1 BVDSS
1.0
0.9
0.8
VGS(th) 0.7
0.6 -60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
RDS(on) - Normalized
© 2015 IXYS CORPORATION, All Rights Reserved
ID - Amperes
70 60 50 40 30 20 10
0 -50
Fig. 7. Maximum Drain Current vs. Case Temperature
-25 0
25 50 75 100 12.