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IXFH60N60X Dataheets PDF



Part Number IXFH60N60X
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXFH60N60X DatasheetIXFH60N60X Datasheet (PDF)

X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFQ60N60X IXFH60N60X VDSS = ID25 = RDS(on) 600V 60A 55m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature.

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X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFQ60N60X IXFH60N60X VDSS = ID25 = RDS(on) 600V 60A 55m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-3P TO-247 Maximum Ratings 600 600 V V 30 V 40 V 60 A 120 A 30 A 2.5 J 50 V/ns 890 W -55 ... +150 150 -55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 5.5 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 600 V 2.5 4.5 V 100 nA 25 A 1.25 mA 55 m TO-3P (IXFQ) G D S TO-247 (IXFH) D (Tab) GDS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls © 2015 IXYS CORPORATION, All Rights Reserved DS100656A(5/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitance Energy related Time related VGS = 0V VDS = 0.8 • VDSS td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC RthCS Characteristic Values Min. Typ. Max 24 40 S 1.4  5800 4130 40 pF pF pF 285 930 27 23 90 13 143 30 70 0.25 pF pF ns ns ns ns nC nC nC 0.14 C/W C/W IXFQ60N60X IXFH60N60X TO-3P Outline E ++ A A2 S D 1 23 L1 A1 0P 0P1 D1 E1 + 4 b2 e b b4 c PINS: 1 - Gate 2, 4 - Drain 3 - Source Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 30A, -di/dt = 100A/μs VR = 100V Characteristic Values Min. Typ. Max 60 A 240 A 1.4 V 200 1.9 18.5 ns μC A TO-247 Outline D A AA22 E R+ D 1 L1 23 L A B 0P O+ 0K M D B M Q S D2 0P1 ixys option C + D1 4 E1 A1 b c b2 b4 e PINS: 1 - Gate O+ J M C A M 2, 4 - Drain 3 - Source Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734B2 7,157,338B2 6,710,405B2 6,759,692 7,063,975B2 6,710,463 6,771,478B2 7,071,537 ID - Amperes ID - Amperes Fig. 1. Output Characteristics @ TJ = 25ºC 60 VGS = 10V 8V 50 7V 40 30 6V 20 10 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC 60 VGS = 10V 8V 50 7V 40 6V 30 20 5V 10 4V 0 01234567 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current 4.0 VGS = 10V 3.5 TJ = 125ºC 3.0 8 2.5 2.0 TJ = 25ºC 1.5 1.0 0.5 0 20 40 60 80 100 120 140 160 180 ID - Amperes BVDSS / VGS(th) - Normalized RDS(on) - Normalized ID - Amperes IXFQ60N60X IXFH60N60X Fig. 2. Extended Output Characteristics @ TJ = 25ºC 160 VGS = 10V 9V 140 120 8V 100 80 60 40 20 0 0 7V 6V 5V 5 10 15 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature 3.4 3.0 VGS = 10V 2.6 2.2 I D = 60A 1.8 I D = 30A 1.4 1.0 0.6 0.2 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 1.2 1.1 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ - Degrees Centigrade RDS(on) - Normalized © 2015 IXYS CORPORATION, All Rights Reserved ID - Amperes 70 60 50 40 30 20 10 0 -50 Fig. 7. Maximum Drain Current vs. Case Temperature -25 0 25 50 75 100 12.


IXFQ60N60X IXFH60N60X AOZ1073


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