Power MOSFET
X-Class HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB90N85X
D G
S
Symbo...
Description
X-Class HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB90N85X
D G
S
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
dv/dt
TJ TJM Tstg
TL TSOLD
FC
Weight
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient
Maximum Ratings
850
V
850
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
90 180
45 4
1785
50
-55 ... +150 150
-55 ... +150
A A
A J
W
V/ns
C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force
30..120 / 6.7..27
N/lb
10
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
850
V
3.5
5.5 V
200 nA
50 A 5 mA
41 m
VDSS = ID25 =
RDS(on)
850V 90A 41m
PLUS264TM
G
D S Tab
G = Gate S = Source
D = Drain Tab = Drain
Features
Low QG Avalanche Rated Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls
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DS10072A(11/19)
Symbol
Test Conditions
(TJ = 25C, Unless O...
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