Document
X-Class HiPerFETTM Power MOSFET
Preliminary Technical Information
IXFA18N60X IXFP18N60X IXFH18N60X
VDSS = ID25 = RDS(on)
600V 18A 230m
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-263 AA (IXFA)
G S D (Tab)
TO-220AB (IXFP)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TLTL TSOLD FC Md
Weight
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings 600 600
30 40
V V
V V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
18 36
5 500
50
320
-55 ... +150 150
-55 ... +150
A A
A mJ
V/ns
W
C C C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
300 260
°C °C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-247 & TO-220)
1.13 / 10
N/lb Nm/lb.in
TO-263 TO-220 TO-247
2.5 g 3.0 g 6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1.5mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ.
Max.
600 V
2.5 4.5 V
100 nA
10 A 500 A
230 m
© 2015 IXYS CORPORATION, All Rights Reserved
GD S TO-247 (IXFH)
D (Tab)
G DS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls
DS100660A(5/15)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 0.5 • ID25, Note 1
RGi Gate Input Resistance
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er) Co(tr)
Effective Output Capacitance
Energy related Time related
VGS = 0V VDS = 0.8 • VDSS
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC RthCS
TO-220 TO-247
IXFA18N60X
Characteristic Values Min. Typ. Max
6 10
S
3.3
1440 1110
14
pF pF pF
IXFP18N60X IXFH18N60X
84 pF 255 pF
20 30 63 24 35
8 18
0.50 0.21
ns ns ns ns
nC nC nC
0.39 C/W C/W C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr QRM IRM
IF = 9A, -di/dt = 100A/μs VR = 100V
Characteristic Values Min. Typ. Max
18
A
72 A
1.4 V
127 ns
705 nC 11 A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123B1 6,306,728B1
6,404,065B1 6,534,343 6,583,505
6,683,344
6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537
ID - Amperes
ID - Amperes
18 16 14 12 10
8 6 4 2 0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V 9V
8V
7V
6V 5V 0.5 1 1.5 2 2.5 3 3.5 4
VDS - Volts
4.5
18 16 14 12 10
8 6 4 2 0
0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGS = 10V 8V
7V
6V
5V 1 2 3 4 5 6 7 8 9 10 11
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 9A Value vs.
Drain Current
4.5
4.0 VGS = 10V 3.5
TJ = 125ºC
3.0
2.5 TJ = 25ºC
2.0
1.5
1.0
0.5 0
5 10 15 20 25 30 35 40 45
ID - Amperes
BVDSS / VGS(th) - Normalized
RDS(on) - Normalized
ID - Amperes
IXFA18N60X IXFP18N60X IXFH18N60X
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
45
40 VGS = 10V
35
9V 30
25 8V 20
15 7V
10 5 6V
0 0 5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 9A Value vs. Junction Temperature
3.8
3.4 VGS = 10V
3.0
2.6 I D = 18A
2.2
1.8 I D = 9A
1.4
1.0
0.6
0.2 -50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1 BVDSS 1.0
0.9
0.8 0.7 VGS(th)
0.6
0.5 -60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
RDS(on) - Normalized
© 2015 IXYS CORPORATION, All Rights Reserved
Fig. 7. Maximum Drain Current vs.
Case Temperature
20
IXFA18N60X IXFP18N60X IXFH18N60X
Fig. 8. Input Admittance
25
16 20
ID - Amperes
ID - Amperes
12 15
TJ = 125ºC 8 10 25ºC
- 40ºC
45
0 -50
-25
0 25 50.