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IXFP18N60X Dataheets PDF



Part Number IXFP18N60X
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXFP18N60X DatasheetIXFP18N60X Datasheet (PDF)

X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA18N60X IXFP18N60X IXFH18N60X VDSS = ID25 = RDS(on) 600V 18A 230m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TLTL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 600 30 40 V V V V TC = 25C TC = 25C, Pulse Wi.

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X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA18N60X IXFP18N60X IXFH18N60X VDSS = ID25 = RDS(on) 600V 18A 230m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TLTL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 600 30 40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 18 36 5 500 50 320 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-247 & TO-220) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1.5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 600 V 2.5 4.5 V 100 nA 10 A 500 A 230 m © 2015 IXYS CORPORATION, All Rights Reserved GD S TO-247 (IXFH) D (Tab) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls DS100660A(5/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitance Energy related Time related VGS = 0V VDS = 0.8 • VDSS td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC RthCS TO-220 TO-247 IXFA18N60X Characteristic Values Min. Typ. Max 6 10 S 3.3  1440 1110 14 pF pF pF IXFP18N60X IXFH18N60X 84 pF 255 pF 20 30 63 24 35 8 18 0.50 0.21 ns ns ns ns nC nC nC 0.39 C/W C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 9A, -di/dt = 100A/μs VR = 100V Characteristic Values Min. Typ. Max 18 A 72 A 1.4 V 127 ns 705 nC 11 A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734B2 7,157,338B2 6,710,405B2 6,759,692 7,063,975B2 6,710,463 6,771,478B2 7,071,537 ID - Amperes ID - Amperes 18 16 14 12 10 8 6 4 2 0 0 Fig. 1. Output Characteristics @ TJ = 25ºC VGS = 10V 9V 8V 7V 6V 5V 0.5 1 1.5 2 2.5 3 3.5 4 VDS - Volts 4.5 18 16 14 12 10 8 6 4 2 0 0 Fig. 3. Output Characteristics @ TJ = 125ºC VGS = 10V 8V 7V 6V 5V 1 2 3 4 5 6 7 8 9 10 11 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 9A Value vs. Drain Current 4.5 4.0 VGS = 10V 3.5 TJ = 125ºC 3.0 2.5 TJ = 25ºC 2.0 1.5 1.0 0.5 0 5 10 15 20 25 30 35 40 45 ID - Amperes BVDSS / VGS(th) - Normalized RDS(on) - Normalized ID - Amperes IXFA18N60X IXFP18N60X IXFH18N60X Fig. 2. Extended Output Characteristics @ TJ = 25ºC 45 40 VGS = 10V 35 9V 30 25 8V 20 15 7V 10 5 6V 0 0 5 10 15 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 9A Value vs. Junction Temperature 3.8 3.4 VGS = 10V 3.0 2.6 I D = 18A 2.2 1.8 I D = 9A 1.4 1.0 0.6 0.2 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 1.2 1.1 BVDSS 1.0 0.9 0.8 0.7 VGS(th) 0.6 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ - Degrees Centigrade RDS(on) - Normalized © 2015 IXYS CORPORATION, All Rights Reserved Fig. 7. Maximum Drain Current vs. Case Temperature 20 IXFA18N60X IXFP18N60X IXFH18N60X Fig. 8. Input Admittance 25 16 20 ID - Amperes ID - Amperes 12 15 TJ = 125ºC 8 10 25ºC - 40ºC 45 0 -50 -25 0 25 50.


IXFA18N60X IXFP18N60X IXFH18N60X


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