XPT IGBT
XPT IGBT
Single IGBT
Part number
IXA70I1200NA
IXA70I1200NA
VCES I C25 VCE(sat)
= = =
1200 V 100 A 1.8 V
(G) 2
(C) ...
Description
XPT IGBT
Single IGBT
Part number
IXA70I1200NA
IXA70I1200NA
VCES I C25 VCE(sat)
= = =
1200 V 100 A 1.8 V
(G) 2
(C) 3 (E) 1+4
Backside: isolated
Features / Advantages:
● Easy paralleling due to the positive temperature coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat)
Applications:
● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode
power supplies ● Inductive heating, cookers ● Pumps, Fans
Package: SOT-227B (minibloc)
● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper
internally DCB isolated ● Advanced power cycling ● Either emitter terminal can be used
as main or Kelvin emitter
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140708c
IXA70I1200NA
IGBT Symbol VCES VGES VGEM I C25 I C80 Ptot VCE(sat)
Definition
collector emitter voltage max. DC gate voltage max. transient gate emitter voltage collector current
total power dissipation collector emitter saturation voltage
VGE(th) I CES
gate emitter threshold voltage collector emitte...
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