IX2120

INTEGRATED CIRCUITS DIVISION Driver Characteristics Parameter VOFFSET IO +/- (Source/Sink) VOUT ton/toff Rating 1200 2/2 15-20 250/210 Units V A V ns Features Floating Channel for Bootstrap Operation to +1200V Outputs Capable of Sourcing and Sinking 2A Gate Drive Supply Range From 15V to 20V Enhanced Robustness due to SOI Process Tolerant to Negative Voltage Transients: dV/dt Immune 3.3V Logic Compatible Undervoltage Lockout for Both High-Side and Low-Side Outputs IX2120 Functional Block Diagram IX2120 1200V High and Low Side Gate Driver Description The IX2120 is a high voltage integrated circuit that can drive high speed MOSFETs and IGBTs that operate at up to +1200V. The IX2120 is configured with independent high-side and low-side referenced output channels, both of which can source and sink 2A. The floating high-side channel can drive an N-channel power MOSFET or IGBT 1200V from the common reference. Manufactured on IXYS Integrated Circuits Division's proprietary high-voltage BCDMOS on SOI (silicon on insulator) process, the IX2120 is extremely robust, and is virtually immune to negative transients. The UVLO circuit prevents turn-on of the MOSFET or IGBT until there is sufficient VBS or VCC supply voltage. The IX2120 is available in a 28-pin SOIC package. Ordering Information Part IX2120B IX2120BTR Description 28-Pin SOIC (28/Tube) 28-Pin SOIC (1000/Reel) VB VDD High Voltage UVLO Level R C Level Shift Shift Mid Q S Buffer HO HIN Input Co...