NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors
Darlington Power Amplifier
Description: The NTE251 (NPN) a...
NTE251 (
NPN) & NTE252 (
PNP) Silicon Complementary
Transistors
Darlington Power Amplifier
Description: The NTE251 (
NPN) and NTE252 (
PNP) are silicon complementary Darlington
transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.
Features: D High DC Current Gain @ IC = 10A:
hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipat...