TIC225D

isc Triacs TIC225D FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitive peak reverse voltage 400 V IT(RMS) RMS on-state current (full sine wave)TC=70℃ 8 A ITSM Non-repetitive peak on-state current 70 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ Rth(j-c) Thermal resistance, junction to case 2.5 ℃/W Rth(j-a) Thermal resistance, junction to ambient 62.5 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IDRM Repetitive peak off-state current VD=VDRM, TC=110℃ IGT Gate trigger current Ⅰ Ⅱ Ⅲ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs Ⅳ IH Holding current Vsupply = 12 V†, IG= 0 initial ITM= 100mA VGT Gate trigger voltage all quadrant Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs VTM On-state voltage IT= 12A; IG= 50mA MAX 2.0 5 20 10 30 20 2 2.1 UNIT mA mA mA V V isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electroni...