TIC106N

isc Thyristors TIC106N APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Glass passivated ·Max IGT of 200μA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current Tc=80℃ IT(RMS) RMS on-state current Tc=80℃ ITM Surge peak on-state current PGM Peak gate power PW≤300μs PG(AV) Average gate power Tj Operating Junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 800 800 3.2 5 30 1.3 0.3 110 -40 ~+125 1.9 62.5 UNIT V V A A A W W ℃ ℃ ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current VRM=VRRM, VRM=VRRM, Tj=110℃ VDM=VDRM, VDM=VDRM, Tj=110℃ 0.4 1.0 mA 0.4 1.0 mA VTM On-state voltage ITM= 5A 1.7 V IGT Gate-trigger current VAA=6V; RL=1kΩ 200 μA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.0 V IH Holding current VAA=6V; RGK=1kΩ, IT= 10mA 5 mA isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Thyristors TIC106N Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented onl...