Document
TELEFUNKEN Semiconductors
U2300B
VHF/ UHF-Tuner-IC
Description
This tuner IC requires a power supply of 12 V and performs the function of three separate oscillators and
mixers, SAWF-driver, L.O.-output and tri-state band switch. Applications are 12 V TV- and VCR-tuners.
Features
D Frequency range from 48 to 860 MHz
D Band A: balanced high impedance mixer input and amplitude controlled oscillator
D Band B + C: balanced low impedance mixer input and symmetrical oscillator
D Balanced L.O.-output for prescalers or PLL
D SAW filter driver with low impedance output
D Voltage regulator for stable operating characteristics
D ESD protection on all pins except oscillator pins and RF-inputs
Benefits
D The integration of 3 bands allows to design economical 3-band tuners
Block Diagram
13
4 65 7
8 10 9 11
19 2
Osc. A
Osc. B
Osc. C
Voltage Stabiliser Band Switch L.O.
12
Mixer Output SAW–Driver
27 28
17 18
14
Band A
25 24
Rev. A1: 16.10.1995
Band B
RF Band C
23 22 26 21 20 Figure 1. Block diagram
16 15
13
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1 (8)
U2300B
TELEFUNKEN Semiconductors
Pin Description
Osc A, base 1 GND (common) 2
Osc A, coll. 3 Osc B, base 4 Osc B, coll. 5 Osc B, coll. 6 Osc B, base 7 Osc C, base 8 Osc C, coll. 9 Osc C, coll. 10 Osc C, base 11
Band sw. 12 SAWF, out 13 SAWF, out 14
28 L.O. out 27 L.O. out 26 GND (RF) 25 RF in, A 24 RF in, A 23 RF in, B 22 RF in, B 21 RF in, C 20 RF in, C 19 VS 18 Mix out 17 Mix out 16 SAWF, inp. 15 SAWF, inp.
95 10886
Pin 1 2
3 4, 7 5, 6 8, 11 9, 10 12 13, 14 15, 16 17, 18
19 20, 21 22, 23 24, 25
26 27, 28
Symbol
Function
Osc A, base Oscillator band A, base
GND Ground, common (common)
Osc A, coll. Oscillator band A, collector
Osc B, base Oscillator band B, bases
Osc B, coll. Oscillator band B, collectors
Osc C, base Oscillator band C, bases
Osc C, coll. Oscillator band C, collectors
Band sw. Tri-state band switch
SAWF, out SAW filter driver outputs
SAWF, inp. SAW filter driver inputs
Mix out Mixer outputs, open collector
VS Supply voltage Vs RF in, C RF inputs, band C
RF in, B RF inputs, band B
RF in, A RF inputs, band A
GND (RF) Ground, RF part
L.O. out L.O.-outputs
Ordering Information
Extended Type Number U2300B-FLG3
Package SO28
Remarks Taped and reeled
Absolute Maximum Ratings
All voltages are referred to GND, Pin 2
Parameters
Supply voltage
Pin 19
RF inputs
Pin 20-25
IF outputs
Pin 17-18
Tri-state switch voltage
Pin 12
Junction temperature
Storage temperature
2 (8)
Symbol Vs
Min.
ViDSW Tjmax Tstg
–40
Typ. Max. Unit 13.5 V 5.0 V 13.5 V 13.5 V 125 °C 125 °C
Rev. A1: 16.10.1995
TELEFUNKEN Semiconductors
U2300B
Operating Range
All voltages are referred to GND, Pin 2
Parameters Supply voltage Ambient temperature Thermal resistance
Test Conditions / Pins Symbol Min. Typ. Max. Unit
Pin 17-19
Vs
10.8
12
13.2
V
Tamb
–25
75 °C
Test conditions page 5,
RthJA
70
K/W
Package SO-28
Electrical Characteristics
Test conditions: Vs = 12 V, Tamb = 25°C, unless otherwise specified, reference point Pin 2, referred to test circuit page 5
Parameters
Test Conditions / Pins
Supply voltage
Pin 17-19
Supply current
Pin 17-19
Band switch
Voltage Band A
Pin 12
Voltage Band B
Pin 12
Voltage Band C
Pin 12
Switching current
VSW = 5 V Pin 12
L.O.-output
L.O. level each output
RL = 50 Ohm Pin 27, 28
SAW filter driver fi = 36 MHz
Input impedance
Pin 15, 16
Output impedance
Pin 13, 14
Voltage gain
15, 16 → 13, 14
Band A
Input frequency range
Pin 24
Input impedance
Figure 3
Pin 24
Gain (note 4)
Pin I/P to O/P
Noise figure DSB (note 2)
Pin I/P to O/P fiA = 50 MHz fiA = 150 MHz
Input level for (note 3):
Each carrier
IM3 (interm. of 3rd order fiA = 71 MHz
Pin I/P
IM2 (interm. of 2nd order) fiA = 71 MHz
Pin I/P
Band B (note 1)
Input frequency range
Pin 22, 23
Input impedance
Figure 3 Pin 22, 23
Gain (note 4)
Pin I/P to O/P
Noise figure DSB (note 2)
Pin I/P to O/P fiB = 200 MHZ fiB = 450 MHz
Input level for (note 3)
Each carrier
IM3 (interm. of 3rd order) fiB = 300 MHz Pin I/P
Symbol VS IS
VSWA VSWB VSWC
ISW
PLO
ZiSAW ZoSAW GvSAW
fiA S11A GA
NF NF
ViA ViA
fiB S11B GB
NF NF
ViB
Min. 10.8
0 1.6 3.4 –25
48
170
Typ. 12.0 42
0 2.0 4.0
450 70 18
29 11.5 12 –21 –21
33 9.5 10 –26
Max. 13.2 50 1.0 2.4 5.0 100 –17
170
470
Unit V mA
V V V mA
dBm
Ohm Ohm dB
MHz
dB
dB dB
dBm dBm
MHz
dB
dB dB
dBm
Rev. A1: 16.10.1995
3 (8)
U2300B
TELEFUNKEN Semiconductors
Parameters
Test Conditions / Pins Symbol Min. Typ. Max. Unit
Band C (note 1)
Input frequency range
Pin 20, 21
fiC 470
860 MHz
Input impedance
Figure 3 Pin 20, 21
S11C
Gain
Pin I/P to O/P
GC
33
dB
Noise figure DSB (note 2)
Pin I/P to O/P
fiC = 500 MHZ
NF
10.5
dB
fiC = 800 MHz
NF
11.5
dB
Input level for (note 3):
Each carrier
IM3 (interm. of 3rd order) fiC = 600 MHz Pin I/P ViC
–26 dBm
Notes
1 The RF input B and C are symmetrical driven by means of a hybrid for 180° phase shifting, consequently the source impedance is 100 W. All .