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U2300B Dataheets PDF



Part Number U2300B
Manufacturers TEMIC Semiconductors
Logo TEMIC Semiconductors
Description VHF/UHF-Tuner-IC
Datasheet U2300B DatasheetU2300B Datasheet (PDF)

TELEFUNKEN Semiconductors U2300B VHF/ UHF-Tuner-IC Description This tuner IC requires a power supply of 12 V and performs the function of three separate oscillators and mixers, SAWF-driver, L.O.-output and tri-state band switch. Applications are 12 V TV- and VCR-tuners. Features D Frequency range from 48 to 860 MHz D Band A: balanced high impedance mixer input and amplitude controlled oscillator D Band B + C: balanced low impedance mixer input and symmetrical oscillator D Balanced L.O.-outp.

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TELEFUNKEN Semiconductors U2300B VHF/ UHF-Tuner-IC Description This tuner IC requires a power supply of 12 V and performs the function of three separate oscillators and mixers, SAWF-driver, L.O.-output and tri-state band switch. Applications are 12 V TV- and VCR-tuners. Features D Frequency range from 48 to 860 MHz D Band A: balanced high impedance mixer input and amplitude controlled oscillator D Band B + C: balanced low impedance mixer input and symmetrical oscillator D Balanced L.O.-output for prescalers or PLL D SAW filter driver with low impedance output D Voltage regulator for stable operating characteristics D ESD protection on all pins except oscillator pins and RF-inputs Benefits D The integration of 3 bands allows to design economical 3-band tuners Block Diagram 13 4 65 7 8 10 9 11 19 2 Osc. A Osc. B Osc. C Voltage Stabiliser Band Switch L.O. 12 Mixer Output SAW–Driver 27 28 17 18 14 Band A 25 24 Rev. A1: 16.10.1995 Band B RF Band C 23 22 26 21 20 Figure 1. Block diagram 16 15 13 95 10717 1 (8) U2300B TELEFUNKEN Semiconductors Pin Description Osc A, base 1 GND (common) 2 Osc A, coll. 3 Osc B, base 4 Osc B, coll. 5 Osc B, coll. 6 Osc B, base 7 Osc C, base 8 Osc C, coll. 9 Osc C, coll. 10 Osc C, base 11 Band sw. 12 SAWF, out 13 SAWF, out 14 28 L.O. out 27 L.O. out 26 GND (RF) 25 RF in, A 24 RF in, A 23 RF in, B 22 RF in, B 21 RF in, C 20 RF in, C 19 VS 18 Mix out 17 Mix out 16 SAWF, inp. 15 SAWF, inp. 95 10886 Pin 1 2 3 4, 7 5, 6 8, 11 9, 10 12 13, 14 15, 16 17, 18 19 20, 21 22, 23 24, 25 26 27, 28 Symbol Function Osc A, base Oscillator band A, base GND Ground, common (common) Osc A, coll. Oscillator band A, collector Osc B, base Oscillator band B, bases Osc B, coll. Oscillator band B, collectors Osc C, base Oscillator band C, bases Osc C, coll. Oscillator band C, collectors Band sw. Tri-state band switch SAWF, out SAW filter driver outputs SAWF, inp. SAW filter driver inputs Mix out Mixer outputs, open collector VS Supply voltage Vs RF in, C RF inputs, band C RF in, B RF inputs, band B RF in, A RF inputs, band A GND (RF) Ground, RF part L.O. out L.O.-outputs Ordering Information Extended Type Number U2300B-FLG3 Package SO28 Remarks Taped and reeled Absolute Maximum Ratings All voltages are referred to GND, Pin 2 Parameters Supply voltage Pin 19 RF inputs Pin 20-25 IF outputs Pin 17-18 Tri-state switch voltage Pin 12 Junction temperature Storage temperature 2 (8) Symbol Vs Min. ViDSW Tjmax Tstg –40 Typ. Max. Unit 13.5 V 5.0 V 13.5 V 13.5 V 125 °C 125 °C Rev. A1: 16.10.1995 TELEFUNKEN Semiconductors U2300B Operating Range All voltages are referred to GND, Pin 2 Parameters Supply voltage Ambient temperature Thermal resistance Test Conditions / Pins Symbol Min. Typ. Max. Unit Pin 17-19 Vs 10.8 12 13.2 V Tamb –25 75 °C Test conditions page 5, RthJA 70 K/W Package SO-28 Electrical Characteristics Test conditions: Vs = 12 V, Tamb = 25°C, unless otherwise specified, reference point Pin 2, referred to test circuit page 5 Parameters Test Conditions / Pins Supply voltage Pin 17-19 Supply current Pin 17-19 Band switch Voltage Band A Pin 12 Voltage Band B Pin 12 Voltage Band C Pin 12 Switching current VSW = 5 V Pin 12 L.O.-output L.O. level each output RL = 50 Ohm Pin 27, 28 SAW filter driver fi = 36 MHz Input impedance Pin 15, 16 Output impedance Pin 13, 14 Voltage gain 15, 16 → 13, 14 Band A Input frequency range Pin 24 Input impedance Figure 3 Pin 24 Gain (note 4) Pin I/P to O/P Noise figure DSB (note 2) Pin I/P to O/P fiA = 50 MHz fiA = 150 MHz Input level for (note 3): Each carrier IM3 (interm. of 3rd order fiA = 71 MHz Pin I/P IM2 (interm. of 2nd order) fiA = 71 MHz Pin I/P Band B (note 1) Input frequency range Pin 22, 23 Input impedance Figure 3 Pin 22, 23 Gain (note 4) Pin I/P to O/P Noise figure DSB (note 2) Pin I/P to O/P fiB = 200 MHZ fiB = 450 MHz Input level for (note 3) Each carrier IM3 (interm. of 3rd order) fiB = 300 MHz Pin I/P Symbol VS IS VSWA VSWB VSWC ISW PLO ZiSAW ZoSAW GvSAW fiA S11A GA NF NF ViA ViA fiB S11B GB NF NF ViB Min. 10.8 0 1.6 3.4 –25 48 170 Typ. 12.0 42 0 2.0 4.0 450 70 18 29 11.5 12 –21 –21 33 9.5 10 –26 Max. 13.2 50 1.0 2.4 5.0 100 –17 170 470 Unit V mA V V V mA dBm Ohm Ohm dB MHz dB dB dB dBm dBm MHz dB dB dB dBm Rev. A1: 16.10.1995 3 (8) U2300B TELEFUNKEN Semiconductors Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Band C (note 1) Input frequency range Pin 20, 21 fiC 470 860 MHz Input impedance Figure 3 Pin 20, 21 S11C Gain Pin I/P to O/P GC 33 dB Noise figure DSB (note 2) Pin I/P to O/P fiC = 500 MHZ NF 10.5 dB fiC = 800 MHz NF 11.5 dB Input level for (note 3): Each carrier IM3 (interm. of 3rd order) fiC = 600 MHz Pin I/P ViC –26 dBm Notes 1 The RF input B and C are symmetrical driven by means of a hybrid for 180° phase shifting, consequently the source impedance is 100 W. All .


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