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SMC4923 Dataheets PDF



Part Number SMC4923
Manufacturers Semtron
Logo Semtron
Description Dual P-Channel Enhancement Mode MOSFET
Datasheet SMC4923 DatasheetSMC4923 Datasheet (PDF)

SMC4923 ■DESCRIPTION -30V Dual P-Channel Enhancement Mode MOSFET ■FEATURE The SMC4923 is the Dual P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications. SMC4923M-TRG ROHS Compliant This is Halogen Free  -30V/-9.0A, RDS(ON) =10mΩ(typ)@VGS =-20V  -30V/-8.0A, RDS.

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SMC4923 ■DESCRIPTION -30V Dual P-Channel Enhancement Mode MOSFET ■FEATURE The SMC4923 is the Dual P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications. SMC4923M-TRG ROHS Compliant This is Halogen Free  -30V/-9.0A, RDS(ON) =10mΩ(typ)@VGS =-20V  -30V/-8.0A, RDS(ON) =12mΩ(typ)@VGS =-10V  -30V/-5.0A, RDS(ON) =16mΩ(typ)@VGS =-4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  SOP-8 package design ■APPLICATIONS  High Frequency Point-of-Load Synchronous  Newworking DC-DC Power System  Load Switch ■PIN CONFIGURATION D1 D1 D2 D2 S1 G1 S2 G2 SOP-8 Top View ■PART NUMBER INFORMATION STP 4923 M - TR G a b c de D1 G1 G2 S1 a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code D2 S2 SMC4923 Rev.1.0 Copyright © Semtron Microtech Corp. 1 www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code SMC4923M-TRG M : SOP-8 ※ Year Code : 0 ~ 9, 2010 : 0 ※ Week Code : A(1~2) ~ Z(53~54) ※SOP-8 : Only available in tape and reel packaging. SMC4923 Handling Code TR : Tape&Reel Shipping 2.5K/Reel ■ABSOLUTE MAXIMUM RATINGS (TA = 25℃ Unless otherwise noted ) Symbol Parameter Typical Unit VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±25 V Continuous Drain Current (TC=25°C) A ID Continuous Drain Current (TC=70°C) VGS=10V -9 A -7 A IDM Pulsed Drain CurrentB -40 A EAS Single Pulse Avalanche energy L=0.1mH C PD Power Dissipation TA=25°C TA=70°C TJ Operation Junction Temperature 50 2.0 1.4 -55 to150 mJ W °C TSTG Storage Temperature Range -55 to150 °C Note: A.The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. B.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ■THERMAL DATA Symbol RθJA RθJL Parameter Thermal Resistance-Junction to AmbientA Thermal Resistance Junction to LeadA Steady-State Steady-State Typ - Max Unit 65 °C/W 45 °C/W SMC4923 Rev.1.0 Copyright © Semtron Microtech Corp. 2 www.semtron-micro.com SMC4923 ■ELECTRICAL CHARACTERISTICS(TJ = 25℃ Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS =0V,ID =-250μA -30 V VGS(th) Gate Threshold Voltage VDS =VGS,ID =-250μA -1.0 -2.5 V IGSS Gate Leakage Current VDS =0V,VGS=±25V ±100 nA IDSS RDS(ON) Gfs Zero Gate Voltage Drain Current Drain-source On-ResistanceB Forward Transconductance VDS =-24V,VGS =0V VDS =-24V,VG.


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