Document
SMC4923
■DESCRIPTION
-30V Dual P-Channel Enhancement Mode MOSFET
■FEATURE
The SMC4923 is the Dual P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications.
SMC4923M-TRG ROHS Compliant This is Halogen Free
-30V/-9.0A, RDS(ON) =10mΩ(typ)@VGS =-20V -30V/-8.0A, RDS(ON) =12mΩ(typ)@VGS =-10V -30V/-5.0A, RDS(ON) =16mΩ(typ)@VGS =-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
SOP-8 package design
■APPLICATIONS
High Frequency Point-of-Load Synchronous Newworking DC-DC Power System Load Switch
■PIN CONFIGURATION
D1 D1 D2 D2
S1 G1 S2 G2
SOP-8 Top View
■PART NUMBER INFORMATION
STP 4923 M - TR G a b c de
D1
G1 G2
S1
a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code
D2 S2
SMC4923 Rev.1.0 Copyright © Semtron Microtech Corp.
1
www.semtron-micro.com
■ORDERING INFORMATION
Part Number
Package Code
SMC4923M-TRG
M : SOP-8
※ Year Code : 0 ~ 9, 2010 : 0 ※ Week Code : A(1~2) ~ Z(53~54) ※SOP-8 : Only available in tape and reel packaging.
SMC4923
Handling Code TR : Tape&Reel
Shipping 2.5K/Reel
■ABSOLUTE MAXIMUM RATINGS (TA = 25℃ Unless otherwise noted )
Symbol
Parameter
Typical
Unit
VDSS Drain-Source Voltage
-30 V
VGSS Gate-Source Voltage
±25 V
Continuous Drain Current (TC=25°C) A ID
Continuous Drain Current (TC=70°C)
VGS=10V
-9 A -7 A
IDM Pulsed Drain CurrentB
-40 A
EAS Single Pulse Avalanche energy L=0.1mH C
PD Power Dissipation
TA=25°C TA=70°C
TJ Operation Junction Temperature
50
2.0 1.4
-55 to150
mJ W °C
TSTG Storage Temperature Range
-55 to150
°C
Note: A.The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
B.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
■THERMAL DATA
Symbol RθJA RθJL
Parameter Thermal Resistance-Junction to AmbientA Thermal Resistance Junction to LeadA
Steady-State Steady-State
Typ -
Max Unit 65 °C/W 45 °C/W
SMC4923 Rev.1.0 Copyright © Semtron Microtech Corp.
2
www.semtron-micro.com
SMC4923
■ELECTRICAL CHARACTERISTICS(TJ = 25℃ Unless otherwise noted )
Symbol
Parameter
Condition
Min Typ Max Unit
Static Parameters
V(BR)DSS
Drain-Source Breakdown Voltage VGS =0V,ID =-250μA
-30
V
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID =-250μA
-1.0
-2.5 V
IGSS Gate Leakage Current
VDS =0V,VGS=±25V
±100 nA
IDSS
RDS(ON) Gfs
Zero Gate Voltage Drain Current
Drain-source On-ResistanceB Forward Transconductance
VDS =-24V,VGS =0V
VDS =-24V,VG.