HIGH POWER DPDT SWITCH GaAs MMIC
NJG1812ME4
HIGH POWER DPDT SWITCH GaAs MMIC
GENERAL DESCRIPTION The NJG1812ME4 is a GaAs DPDT switch MMIC suitable f...
Description
NJG1812ME4
HIGH POWER DPDT SWITCH GaAs MMIC
GENERAL DESCRIPTION The NJG1812ME4 is a GaAs DPDT switch MMIC suitable for
antenna swapping of LTE/UMTS/CDMA/GSM applications. The NJG1812ME4 features very low insertion loss, low distortion
and excellent linearity performance down to 1.8V 1bit control voltage at high frequency up to 3GHz. In addition, this switch is able to handle high power signals.
The NJG1812ME4 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the small & thin EQFN12-E4 package is adopted.
PACKAGE OUTLINE NJG1812ME4
APPLICATIONS Antenna swapping, General purpose switching applications
LTE, UMTS, CDMA, GSM systems
FEATURES
Low voltage logic control
VCTL(H)=1.35V to 5.0V
Low voltage operation
VDD=2.7V typ.
Low insertion loss
0.25dB typ. @f=900MHz, PIN=+35dBm
0.35dB typ. @f=1900MHz, PIN=+33dBm
0.45dB typ. @f=2700MHz, PIN=+27dBm
Low distortion
2nd harmonics=-89dBm typ. @ f=786.5MHz, PIN=+23dBm
3rd harmonics=-89dBm typ. @ f=710MHz, PIN=+23dBm
P-0.1dB
+36 dBm min.
Ultra-small and ultra-thin package
EQFN12-E4 (Package size: 2.0 x 2.0 x 0.397 mm typ.)
RoHS compliant and Halogen Free, MSL1
PIN CONFIGURATION (TOP VIEW)
1PIN INDEX GND P3 GND
12 11 10
VDD 1
9 P4
DECODER
GND 2
8 GND
VCTL 3
7 P1
Pin connection
1. VDD
7. P1
2. GND
8. NC(GND)
3. VCTL
9. P4
4. GND
10. NC(GND)
5. P2
11. P3
6. GND
12. GND
Ex...
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