N ENWEPWRPORDOUDCUTC T
Product Summary
V(BR)DSS -30V
RDS(on) max
20mΩ @ VGS = -10V 29mΩ @ VGS = -5V
ID TC = +25°C
-18.0A
-15.0A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
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