ADVANCE INFORMATION
Summary
V(BR)DSS -20V
RDS(on) max 260mΩ @VGS = -4.5V 500mΩ @VGS = -2.5V 1000mΩ @VGS = -1.8V
ID max -0.9 A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
Battery Disconne...
