P-CHANNEL ENHANCEMENT MODE MOSFET
45mΩ @ VGS = -4.5V
65mΩ @ VGS = -2.5V
TA = +25°C
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)), and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
General Purpose Interfacing Switch
Power Management Functions
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
Ordering Information (Note 4)
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds4. For packaging details, go to our website at http://www.diodes.com.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
26P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Document number: DS36578 Rev. 4 - 2
Shanghai A/T Site
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© Diodes Incorporated