STN2306

N-Channel Enhancement Mode MOSFET STN2306 30V N-Channel Enhancement Mode MOSFET ■DESCRIPTION ■FEATURE The STN2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package. ‹ 30V/3.6A, RDS(ON)= 45mΩ(typ.)@VGS= 10V ‹ 30V/2.8A, RDS(ON)= 55mΩ(typ.)@VGS= 4.5V ‹ Super high density cell design for extremely low RDS(ON) ‹ Exceptional on-resistance and Maximum DC current capability ‹ This is a Green compliance ‹ SOT-23L package design ■APPLICATIONS ‹ Power Management in Note book ‹ Portable Equipment ‹ DSC ‹ LCD Display inverter ‹ Battery Powered System ‹ DC/DC Converter ■PIN CONFIGURATION Gate Source Drain TOP VIEW SOT-23L D G S N-Channel ■PART NUMBER INFORMATION STN2306X- XX X Lead Plating Code Handling Code Package Code Lead Plating Code G : Lead-free product. This product is Green compliant Handling Code TR : Tape&Reel Package Code S : SOT-23L STN2306 Rev.1.1 Copyright © Semtron Microtech Corp. 1 www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code Package STN2306S-TRG S SOT-23L ※ SOT-23L : Only available in tape and reel packaging. (A reel contains 3000 devices) ※ G : Lead-free product. This product is ...