STN2302

N-Channel Enhancement Mode MOSFET STN2302 ■DESCRIPTION 20V N-Channel Enhancement Mode MOSFET ■FEATURE The STN2302 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and operation gate as 1.8V. This device is suitable for use as a load switch or other general applications.  20V/4.0A, RDS(ON) =50mΩ(typ.)@VGS =4.5V  20V/3.0A, RDS(ON) =65mΩ(typ.)@VGS =2.5V  Super high density cell design for extremely low Gate Charge  Exceptional on-resistance and Maximum DC current capability STN2302S-TRG ROHS Compliant This is Halogen Free ■APPLICATIONS  Power Management in Note book  Portable Equipment  Load Switch ■PIN CONFIGURATION Drain Source Gate SOT-23 Top View ■PART NUMBER INFORMATION ST N 2302 S - TR G a b c d ef D G S a : Company name. b : Channel type. c : Product Serial number. d : Package code e : Handling code f : Green product code STN2302 Rev.1.0 Copyright © Semtron Microtech Corp. 1 www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code STN2302S-TRG S : SOT-23 ※ Year Code : 0 ~ 9, 2010 : 0 ※ Week Code : A(1~2) ~ Z(53~54) ※ SOT-23 : Only available in tape and reel packaging. STN2302 Handling Code TR : Tape&Reel Shipping 3K/Reel ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Typical VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 Continuous Drain Current (TC=25...