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TSF10N60C

600V Insulated N-Channel Type Power MOSFET

Description

TSF10N60C ® TSF10N60C Pb Free Plating Product Pb 10.3A,600V Insulated N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.75 Ω )@VGS=10V ■ Gate Charge (Typical 45nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested 1. Gate { { 2. Drain ● ◀▲ ● ● { 3. Source BVDSS = 600V RDS(ON) = 0.75 ohm ID = 10.3A General Description This N-c...

Thinki Semiconductor

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