BUX45

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.) @ IC= 1A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high voltage, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCER VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 500 V 500 V 500 V 500 V 7 V 5 A 7 A 1 A 120 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W BUX45 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICEO Collector Cutoff Current ICBO Collector Cutoff Curren...