BUX41N

isc Silicon NPN Power Transistor BUX41N DESCRIPTION · Collector-Emitter Voltage- : VCEO= 160V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 220 V VCEO Collector-Emitter Voltage 160 V VCEX Collector-Emitter Voltage VBE= -1.5V 220 V VCER Collector-Emitter Voltage RBE= 100Ω 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 18 A ICM Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @TC=100℃ TJ Junction Temperature 3.6 A 120 W 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=50mA; IC= 0 VCE(sat)-1 VCE(sat)-2 Collector-Emitter Voltage Collector-Emitter Voltage Saturation IC=8A; IB=0.8A Saturation IC=12A; IB=1.5A VBE(sat) Base-Emitter Saturation Voltage IC=12A; IB=1.5A ICEO Collector Cutoff Current ICBO Collector Cutof...