INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUS133/A
DESCRIPTION ·High Switchin...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistors
isc Product Specification
BUS133/A
DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V (Min)-BUS133 500V (Min)-BUS133A
APPLICATIONS ·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
BUS133
850
BUS133A 1000
V
VCEO
Collector-Emitter Voltage
BUS133 BUS133A
450 500
V
VEBO IC ICM IB IBM PC Tj Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature
Storage Temperature Range
9 15 20 10 15 175 200 -65~200
V A A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistors
isc Product Specification
BUS133/A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BUS133 BUS133A
IC= 0.1A ; IB= 0; L= 10mH
450 500
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
BUS133 IC= 5A; IB= 0.7A BUS133A IC= 5A; IB= 1A
2.5 V
1.0
VCE(sat)-2
Collector-Emitter Saturation Voltage
BUS133 IC= 10A; IB= 1.3A BUS133A IC= 10A; IB= 2A
3.0 V
1.5
VBE(sat)
ICEV IEBO
Base-Emitter Saturation Voltage
BUS13...